| PART |
Description |
Maker |
| TC58NYG1S3HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NVG2S0HTA00 |
SLC NAND
|
TOSHIBA
|
| TC58NVG1S3HBAI6 |
SLC NAND
|
TOSHIBA
|
| TC58NVG1S3HTA00 |
SLC NAND
|
TOSHIBA
|
| TH58NYG3S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NYG2S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| NAND512R3A2SN6F |
512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
|
Numonyx B.V
|
| ST6294M8 |
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
|
|
| 25M02GVTBIG 25M02GVTBIT 25M02GVTCIG 25M02GVTCIT 25 |
3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS
|
Winbond
|
| M38510/02006BAB M38510/02006BAA M38510/02002BDB M3 |
CERAMIC CHIP/MIL-PRF-55681
Triple 3-input NAND Gate 3输入与非
Quad 2-input NAND Gate 输入与非
Single 8-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate 输入与非
Dual 4-input NAND Gate 4输入与非
|
ITT, Corp.
Astrodyne, Inc.
Ecliptek, Corp.
Electronic Theatre Controls, Inc.
Bourns, Inc.
Newhaven Display International, Inc.
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
